2022, Vol. 3, Issue 2, Part A
On approach to increase integration rate of elements of a operational transresistance amplifier
Author(s): EL Pankratov
Abstract: In this paper we introduce an approach to increase integration rate of elements of a operational transresistance amplifier. In the framework of the approach we consider a heterostructure with special configuration. Several specific areas of the heterostructure should be doped by diffusion or ion implantation. Annealing of dopant and/or radiation defects should be optimized.
Pages: 06-26 | Views: 499 | Downloads: 176
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How to cite this article:
EL Pankratov. On approach to increase integration rate of elements of a operational transresistance amplifier. Journal of Mathematical Problems, Equations and Statistics. 2022; 3(2): 06-26.
